um6k1n transistors rev.b 1/3 2.5v drive nch+nch mos fet um6k1n z structure z external dimensions (unit : mm) silicon n-channel mos fet z features 1) two 2sk3018 transistors in a single umt package. 2) the mos fet elements are independent, eliminating mutual interference. 3) mounting cost and area can be cut in half. 4) low on-resistance. 5) low voltage drive (2.5v drive) makes this device ideal for portable equipment. z applications interfacing, switching (30v, 100ma) z packaging specifications z inner circuit package code taping basic ordering unit (pieces) um6k1n tn 3000 type z absolute maximum ratings (ta=25 c) ?1 ?2 parameter v v dss symbol v v gss ma i d ma i dp mw p d c tch c tstg limits unit drain-source voltage gate-source voltage drain current total power dissipation channel temperature range of storage temperature continuous pulsed ?1 pw10s, duty cycle1% ?2 with each pin mounted on the recommended lands. 30 150 ?55 to +150 20 100 400 150 z thermal resistance parameter c / w / total rth(ch-a) symbol limits unit channel to ambient ? with each pin mounted on the recommended lands. 833 c / w / element 1042 ? (1) ? gate protection diode tr1 tr2 gate protection diode ? ? a protection diode has been built in between the gate and the source to protect against static electricity when the product is in use. use the protection circuit when rated voltages are exceeded. (1) tr1 source (2) tr1 gate (3) tr2 drain (4) tr2 source (5) tr2 gate (6) tr1 drain (2) (3) (4) (5) (6) each lead has same dimensions umt6 ( 6 ) 2.0 1.3 0.9 0.15 0.7 0.1min. 2.1 0.65 0.2 1.25 ( 1 ) 0.65 ( 4 ) ( 3 ) ( 2 ) ( 5 ) 1pin mark abbreviated symbol : k1
um6k1n transistors rev.b 2/3 z electrical characteristics (ta=25 c) parameter symbol i gss y fs min. ? typ. max. unit conditions v (br) dss i dss v gs (th) r ds (on) c iss c oss c rss t d (on) t r t d (off) t f gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time ? 1 av gs =20v, v ds =0v 30 ?? vi d = 10a, v gs =0v ?? 1.0 av ds = 30v, v gs =0v 0.8 ? 1.5 v v ds = 3v, i d = 100a ? 58 i d = 10ma, v gs = 4v ? 713 ? ? i d = 1ma, v gs = 2.5v 20 ?? ms i d = 10ma, v ds = 3v ? 13 ? pf v ds = 5v ? 9 4 ? pf v gs =0v ? 15 ? pf f=1mhz ? 35 ? ns ? 80 ? ns ? 80 ? ns ?? ns v dd 5 v i d = 10ma v gs = 5v r l =500? r g =10? z electrical characteristic curves 01 2 34 5 0 0.05 0.1 0.15 drain current : i d ( a) drain-source voltage : v ds ( v) 3v 3.5v 2.5v v gs =1.5v 4v 2v fig.1 typical output characteristics fig.2 typical transfer characteristic s 0 4 0.1m 100m drain current : i d ( a) gate-source voltage : v gs ( v) 1 10m 3 2 1m 0.2m 0.5m 2m 5m 50m 20m 200m ta=125 c 75 c 25 c ?25 c v ds =3v pulsed ? 50 0 0 1 1.5 2 gate threshold voltage : v gs (th) ( v ) channel temperature : tch ( c) 0.5 ? 25 25 50 75 100 125 15 0 v ds =3v i d =0.1ma fig.3 gate threshold voltage vs. channel temperature 0.001 1 2 50 static drain-source on-state resistance : r ds (on) (?) drain current : i d ( a) 0.5 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0. 5 5 10 20 ta=125 c 75 c 25 c ?25 c v gs =4v pulsed fig.4 static drain-source on-state resistance vs. drain current ( ) 0.001 1 2 50 static drain-source on-state resistance : r ds (on) (?) drain current : i d ( a) 0.5 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0. 5 5 10 20 ta=125 c 75 c 25 c ?25 c v gs =2.5v pulsed fig.5 static drain-source on-state resistance vs. drain current ( ) 0 5 10 15 2 0 0 5 10 15 gate-source voltage : v gs ( v) i d =0.1a static drain-source on-state resistance : r ds (on) (?) ta=25 c pulsed i d =0.05a fig.6 static drain-source on-state resistance vs. gate-source voltag e
um6k1n transistors rev.b 3/3 ? 50 0 25 150 0 3 6 9 channel temperature : tch ( c) static drain-source on-state resistance : r ds (on) (?) ?25 50 75 100 125 2 1 4 5 7 8 v gs =4v pulsed i d =100ma i d =50ma fig.7 static drain-source on-state resistance vs. channel temperature 0.0001 0.001 0.01 0.02 0.5 forward transfer admittance : yfs (s) drain current : i d ( a) 0.005 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.05 0.1 0.2 0.1 0.2 0. 5 0.002 ta=?25 c 25 c 75 c 125 c v ds =3v pulsed fig.8 forward transfer admittance vs . drain current 200m reverce drain current : i dr ( a) source-drain voltage : v sd ( v) 1 .5 1 0.5 0 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m v gs =0v pulsed ta=125 c 75 c 25 c ?25 c fig.9 reverse drain current vs. source-drain voltage ( ) 200m reverce drain current : i dr ( a) source-drain voltage : v sd ( v) 1 .5 1 0.5 0 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m ta=25 c pulsed v gs =4v 0v fig.10 reverse drain current vs. source-drain voltage ( ) 0.1 1 2 50 capacitance : c (pf) drain-source voltage : v ds ( v) 0.5 0.2 0.5 1 2 5 10 20 5 0 5 10 20 c iss c oss c rss ta =25 c f=1mh z v gs =0v pulsed fig.11 typical capacitance vs. drain-source voltage 0.1 10 20 500 swithing time : t (ns) drain current : i d ( ma) 5 0.2 0.5 1 2 5 10 20 50 50 100 200 1000 2 10 0 ta =25 c v dd =5v v gs =5v r g =10 ? t d(off) t r t d(on) t f fig.12 switching characteristics z switching characteristics measurement circuit fig.13 switching time test circuit v gs r g v d s d.u.t. i d r l v dd 90% 50% 10% 90% 10% 50% pulse width 10% v gs v ds 90% t f t off t d(off) t r t on t d(on) fig.14 switching time waveforms
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